DMN2710UDWQ Datasheet Dual N-Channel MOSFET

Manufacturer: Diodes Incorporated

DMN2710UDWQ dual n-channel mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMN2710UDWQ
Manufacturer	Diodes Incorporated
File Size	549.39 KB
Description	Dual N-Channel MOSFET
Download	DMN2710UDWQ Download (PDF)

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications  Battery Operated Systems and Solid-State Relays  Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

 Power Supply Converter Circuits SOT363

Overview

NEW PRODUCT ADVANCED INFORMATION DMN2710UDWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) MAX 0.45Ω @ VGS = 4.5V 0.6Ω @ VGS = 2.5V ID MAX @TA = +25°C 0.8A 0.

Key Features

Low On-Resistance.
Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Low Input/Output Leakage.
Complementary Pair MOSFET.
Ultra-Small Surface Mount Package.
ESD Protected.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
The DMN2710UDWQ is suitable for automotive.

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