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DMN2710UV - Dual N-Channel MOSFET

Datasheet Summary

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage VGS(TH) < 1V.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Datasheet preview – DMN2710UV

Datasheet Details

Part number DMN2710UV
Manufacturer DIODES
File Size 423.77 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet DMN2710UV Datasheet
Additional preview pages of the DMN2710UV datasheet.

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Full PDF Text Transcription

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DMN2710UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 0.45Ω @VGS = 4.5V 0.6Ω @VGS = 2.5V ID @TA = +25°C 0.92A 0.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits  Low On-Resistance  Low Gate Threshold Voltage VGS(TH) < 1V  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.
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