DMN2710UV Datasheet Dual N-Channel MOSFET

Manufacturer: Diodes Incorporated

DMN2710UV dual n-channel mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMN2710UV
Manufacturer	Diodes Incorporated
File Size	423.77 KB
Description	Dual N-Channel MOSFET
Download	DMN2710UV Download (PDF)

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Overview

DMN2710UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 0.45Ω @VGS = 4.5V 0.6Ω @VGS = 2.5V ID @TA = +25°C 0.92A 0.

Key Features

Low On-Resistance.
Low Gate Threshold Voltage VGS(TH) < 1V.
Low Input Capacitance.
Fast Switching Speed.
Low Input/Output Leakage.
Ultra-Small Surface Mount Package.
ESD Protected Gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
For automotive.

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