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DMN3061SQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max
59mΩ @VGS = 10V 98mΩ @VGS = 4.5V
ID Max TA = +25°C
2.9A 2.3A
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
General-purpose interfacing switches Power-management functions
SOT23
Features
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.