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DMN3061SVT Datasheet Dual N-CHANNEL MOSFET

Manufacturer: Diodes Incorporated

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications  Backlighting  DC-DC Converters  Power Management Functions TSOT26  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.

“Green” Device (Note 3) Mechanical Data  Case: TSOT26  Case Material: Molded Plastic, “Green” Molding Compound.

Overview

ADVANCE INFORMATION DMN3061SVT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product.

Key Features

  • BVDSS 30V RDS(ON) 60mΩ @ VGS= 10V 100mΩ @ VGS= 4.5V ID TA = +25°C 3.4A 2.7A.