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DMN3061SVT - Dual N-CHANNEL MOSFET

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting DC-DC Converters Power Management Functions TSOT2

Features

  • BVDSS 30V RDS(ON) 60mΩ @ VGS= 10V 100mΩ @ VGS= 4.5V ID TA = +25°C 3.4A 2.7A.

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Datasheet Details

Part number DMN3061SVT
Manufacturer DIODES
File Size 493.33 KB
Description Dual N-CHANNEL MOSFET
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ADVANCE INFORMATION DMN3061SVT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BVDSS 30V RDS(ON) 60mΩ @ VGS= 10V 100mΩ @ VGS= 4.5V ID TA = +25°C 3.4A 2.7A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  DC-DC Converters  Power Management Functions TSOT26  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: TSOT26  Case Material: Molded Plastic, “Green” Molding Compound.
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