DMN3061SVT
DMN3061SVT is Dual N-CHANNEL MOSFET manufactured by Diodes Incorporated.
Features and Benefits
BVDSS 30V
RDS(ON)
60mΩ @ VGS= 10V 100mΩ @ VGS= 4.5V
ID TA = +25°C
3.4A 2.7A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
- Backlighting
- DC-DC Converters
- Power Management Functions
TSOT26
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
- Case: TSOT26
- Case Material: Molded Plastic, “Green” Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Connections: See Diagram
- Terminals: Finish
- Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
- Weight: 0.013 grams (Approximate)
D1
D2
G1 1
6 D1
Top View
S2 2 G2 3
5 S1 4 D2
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