Download DMN33D8LDWQ Datasheet PDF
Diodes Incorporated
DMN33D8LDWQ
DMN33D8LDWQ is Dual N-CHANNEL MOSFET manufactured by Diodes Incorporated.
Features and Benefits - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - ESD Protected - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability - PPAP Capable (Note 4) Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: - Motor Control - DC-DC Converters - Backlighting Mechanical Data - Case: SOT363 - Case Material: Molded Plastic, "Green" Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections Indicator: See Diagram - Terminals: Finish  Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 e3 - Weight: 0.006 grams (Approximate) SOT363 D1 G2 S2 ESD PROTECTED Top View Q1 Q2 S1 G1 D2 Top View Internal Schematic Ordering Information (Note 5) Notes: Part Number Case Packaging...