DMN33D8LT Datasheet | Diodes Incorporated

Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications - DC-DC Converters - Power Management Functions - Battery Operated Systems and Solid-State Relays - Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. N-CHANNEL ENHANCEMENT MODE MOSFET Features - N-Channel MOSFET - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Small Surface Mount Package - ESD Protected Gate 2k V - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Qsuffix) part. A listing can be found at https://.diodes./products/automotive/automotiveproducts/. - This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://.diodes./quality/product-definitions/ - An Automotive-pliant Part is Available Under Separate Datasheet (DMN33D8LTQ) Mechanical Data - Case: SOT523 - Case Material: Molded Plastic. “Green” Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Matte Tin Finish Annealed Over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 - Terminal Connections: See Diagram - Weight: 0.002 grams (Approximate) ESD PROTECTED SOT523 Top View Drain Gate Gate Protection Diode Source Equivalent...