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DMN33D8LVQ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max
3Ω @ VGS = 4.5V 7Ω @ VGS = 2.5V
ID Max TA = +25°C
350 mA
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Motor controls Power management functions DC-DC converters Backlighting
SOT563
Features and Benefits
Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.