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DMN6041SVT - 60V N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

DC-DC converters Power-management functions Backlighting Mechanical

Key Features

  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • Low Input Capacitance.
  • Low On-Resistance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription for DMN6041SVT (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN6041SVT. For precise diagrams, and layout, please refer to the original PDF.

DMN6041SVT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 48mΩ @ VGS = 10V 60mΩ @ VGS = 4.5V ID TA = +25°C 4.1A 3.8A Features and Benefits  ...

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10V 60mΩ @ VGS = 4.5V ID TA = +25°C 4.1A 3.8A Features and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  Low Input Capacitance  Low On-Resistance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveprodu

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