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DMT10H015SPS - 100V N-CHANNEL MOSFET

General Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance.

This device is ideal for use in notebook battery power management and load switch.

Key Features

  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Full PDF Text Transcription for DMT10H015SPS (Reference)

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Green DMT10H015SPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 100V RDS(ON) Max 14.5mΩ @ VGS = 10V 19.5mΩ @ VGS = 6V ID MAX TC = +25°C 46A ...

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DS(ON) Max 14.5mΩ @ VGS = 10V 19.5mΩ @ VGS = 6V ID MAX TC = +25°C 46A 39A Description This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. Features  100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application  Thermally Efficient Package—Cooler Running Applications  High Conversion Efficiency  Low RDS(ON)—Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  Lead-Free Finish; RoHS Compliant

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