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DMT10H032SFVW - 100V N-CHANNEL MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Features

  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Datasheet Details

Part number DMT10H032SFVW
Manufacturer DIODES
File Size 618.45 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet DMT10H032SFVW Datasheet
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DMT10H032SFVW 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS RDS(ON) Max 100V 32m @ VGS = 10V ID Max TC = +25°C 35A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  Wettable Flank for Improved Optical Inspection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.
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