DMT10H032LFDF Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
DMT10H032LFDF Key Features
- 0.6mm Profile
- Ideal for Low Profile
DMT10H032LFDF Applications
- Ideal for Low Profile Applications PCB Footprint of 4mm2 Low On-Resistance 100% Unclamped Inductive Switching (UIS) Test in Production
- Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Fo