Datasheet4U Logo Datasheet4U.com

DMTH10H009LFG - 100V N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Key Features

  • Low RDS(ON).
  • Ensures On State Losses are Minimized.
  • Excellent Qgd × RDS(ON) Product (FOM).
  • Advanced Technology for DC/DC Converters.
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products.
  • Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product.
  • 100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NEW PRODUCT Green DMTH10H009LFG 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max 100V 8.5mΩ @ VGS = 10V 12.5mΩ @ VGS = 4.5V ID MAX TC = +25°C 55A 45A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.