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DMTH10H009SPSQ - 100V N-CHANNEL MOSFET

General Description

Mechanical Data This MOSFET is designed to meet the stringent requirements of

automotive applications.

PPAP and is ideal for use in: Motor Control DC-DC Converters Power Management PowerDI5060-8

Key Features

  • Rated to +175C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMTH10H009SPSQ 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 100V RDS(ON) Max 8.9mΩ @ VGS = 10V ID TC = +25°C 86A Features  Rated to +175C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Thermally Efficient Package-Cooler Running Applications  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  <1.1mm Package Profile – Ideal for Thin Applications (PowerDI®)  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.