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DMTH10H017LPD - 100V Dual N-Channel MOSFET

Description

and Applications This new generation MOSFET

Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Datasheet Details

Part number DMTH10H017LPD
Manufacturer Diodes Incorporated
File Size 501.50 KB
Description 100V Dual N-Channel MOSFET
Datasheet download datasheet DMTH10H017LPD Datasheet
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Green DMTH10H017LPD 100V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 100V RDS(ON) max 17.4mΩ @ VGS = 10V 30.3mΩ @ VGS = 4.5V ID max TC = +25°C 59A 45A Description and Applications This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
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