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DMTH6006SPS - 60V N-CHANNEL MOSFET

General Description

Rated to +175°C Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End Application High Conversion Efficiency Low RDS(ON) Minimizes On State Losses L

Key Features

  • BVDSS 60V RDS(ON) MAX 6.2mΩ @ VGS = 10V ID MAX TC = +25°C 100A.

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Product Summary Green DMTH6006SPS 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Features BVDSS 60V RDS(ON) MAX 6.2mΩ @ VGS = 10V ID MAX TC = +25°C 100A Description  Rated to +175°C — Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  High Conversion Efficiency  Low RDS(ON) – Minimizes On State Losses  Low Input Capacitance  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.