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DMTH6006SPSW - N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Synchronous rectifiers DC-DC converters Power management Mechanical Data Pack

Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Datasheet Details

Part number DMTH6006SPSW
Manufacturer DIODES
File Size 480.79 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DMTH6006SPSW Datasheet
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DMTH6006SPSW Green 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) MAX 6.2mΩ @ VGS = 10V ID MAX TC = +25°C 100A Features • Rated to +175°C — Ideal for High Ambient Temperature Environments • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application • High Conversion Efficiency • Low RDS(ON) – Minimizes On-State Losses • Low Input Capacitance • Fast Switching Speed • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e.
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