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DMTH6010LPDW - 60V Dual N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Engine management systems Body control electronics DC-DC converters Rated to

Key Features

  • BVDSS 60V RDS(ON) max 11mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID max TC = +25°C 47.6A 39.5A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION DMTH6010LPDW Product Summary 60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Features and Benefits BVDSS 60V RDS(ON) max 11mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID max TC = +25°C 47.6A 39.5A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.