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DMTH6010LPDWQ - 60V Dual N-CHANNEL MOSFET

General Description

This MOSFET is designed to meet the stringent requirements of automotive applications.

Key Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION DMTH6010LPDWQ 60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) max 11mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID max TC = +25°C 47.6A 39.5A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.