Description
and Applications This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance.
Key Features
- BVDSS 60V RDS(ON) Max 20.5mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V ID Max TC = +25°C 24.5A 21.5A