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DMTH6015LPDW Datasheet 60v Dual N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: Product Summary BVDSS 60V RDS(ON) 20mΩ @ VGS = 10V 27mΩ @ VGS = 4.

General Description

and Applications This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance.

This device is ideal for use in power management and load switch.

• Wireless Charging • DC-DC Converters • Power Management PowerDI5060-8/SWP (Type UXD) Mechanical Data • Case: PowerDI®5060-8 • Case Material: Molded Plastic, “Green” Molding Compound.

Key Features

  • ID TC = +25°C 36.3A 31.2A.
  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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