Datasheet4U Logo Datasheet4U.com

DMTH6016LPDW - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Engine-management systems Body control electronics DC-DC converters Me

Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

📥 Download Datasheet

Datasheet preview – DMTH6016LPDW

Datasheet Details

Part number DMTH6016LPDW
Manufacturer DIODES
File Size 514.14 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DMTH6016LPDW Datasheet
Additional preview pages of the DMTH6016LPDW datasheet.

📁 Similar Datasheet

Other Datasheets by DIODES

Full PDF Text Transcription

Click to expand full text
DMTH6016LPDW 60V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 19mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V ID Max TC = +25°C 33.2A 28A Features and Benefits • Rated to +175°C – Ideal for High Ambient Temperature Environments • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application • High Conversion Efficiency • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.
Published: |