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DMTH6016LPDW - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Engine-management systems Body control electronics DC-DC converters Me

Key Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Other Datasheets by Diodes Incorporated

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMTH6016LPDW 60V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 19mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V ID Max TC = +25°C 33.2A 28A Features and Benefits • Rated to +175°C – Ideal for High Ambient Temperature Environments • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application • High Conversion Efficiency • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.