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DMTH6016LPSW - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Power management DC-DC converters Motor controls Mechanical Data

Key Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching.
  • Ensures More Reliable and Robust End.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMTH6016LPSW 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) 16mΩ @ VGS = 10V 24mΩ @ VGS = 4.5V ID TC = +25°C 37.1A 30.3A Features • Rated to +175°C – Ideal for High Ambient Temperature Environments • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application • High Conversion Efficiency • Low RDS(ON) – Minimizes On-State Losses • Low Input Capacitance • Fast Switching Speed • Thermally Efficient Package – Cooler Running Applications • < 1.1mm Package Profile – Ideal for Thin Applications • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.