DMTH8001STLW Datasheet (PDF) Download
Diodes Incorporated
DMTH8001STLW

Description

and Applications This new generation N-Channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance.

Key Features

  • Rated to +175°C - Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production - Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON) - Minimizes On-state Losses
  • Wettable Flank for Improved Optical Inspection
  • Lead-Free Finish; RoHS pliant (Notes 1 &
  • Halogen and Antimony Free. “Green” Device (Note
  • An automotive-pliant part is available under separate datasheet (DMTH8001STLWQ) Mechanical Data
  • Package: POWERDI®1012-8 (TOLL)
  • Package Material: Molded Plastic, "Green" Molding pound. UL Flammability Classification Rating 94V-0

Applications

  • DC-DC converters