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DMTH8008SPSW - N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance.

This device is ideal for use in power management and load switches.

DC-DC converters Load switches Mechanical Data Package: PowerDI® 5060-8

Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Datasheet Details

Part number DMTH8008SPSW
Manufacturer DIODES
File Size 487.85 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DMTH8008SPSW Datasheet
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DMTH8008SPSW Green 80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 80V RDS(ON) 7.8mΩ @ VGS = 10V ID TC = +25°C 92A Features • Rated to +175°C — Ideal for High Ambient Temperature Environments • 100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application • High Conversion Efficiency • Low RDS(ON) — Minimizes On-State Losses • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • An automotive-compliant part is available under separate datasheet (DMTH8008SPSWQ) Description and Applications This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance.
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