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DMTH8022LFDFW - 80V N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Power-management functions Battery-operated systems and solid-stat

Features

  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Full PDF Text Transcription

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DMTH8022LFDFW Green 80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 80V RDS(ON) Max 22mΩ @ VGS = 10V 38mΩ @ VGS = 4.5V ID Max TA = +25°C 5A 4A Features and Benefits • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application • Thermally Efficient Package - Cooler Running Applications • High Conversion Efficiency • Low RDS(ON) – Minimizes On-State Losses • Low Input Capacitance • Fast Switching Speed • < 1.1mm Package Profile – Ideal for Thin Applications • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.
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