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DMWS120H100SM4 - 1200V N-Channel MOSFET

Description

This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for highefficiency power-management applications.

Data centers and telecom power supplies Industrial motor drives DC-DC converters Sol

Features

  • Low On-Resistance.
  • High BVDSS Rating for Power.

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Datasheet Details

Part number DMWS120H100SM4
Manufacturer DIODES
File Size 575.55 KB
Description 1200V N-Channel MOSFET
Datasheet download datasheet DMWS120H100SM4 Datasheet
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DMWS120H100SM4 Green 1200V N-CHANNEL SILICON CARBIDE POWER MOSFET Product Summary BVDSS 1200V RDS(ON) Max 100mΩ @ VGS = 15V ID TC = +25°C 37.2A Description and Applications This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for highefficiency power-management applications.  Data centers and telecom power supplies  Industrial motor drives  DC-DC converters  Solar inverters  EV battery chargers TO247-4 Standard Top View Bottom View Features and Benefits  Low On-Resistance  High BVDSS Rating for Power Application  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.
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