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DMWSH120H28SM4Q - 1200V N-CHANNEL SILICON CARBIDE POWER MOSFET

General Description

This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for highefficiency power-management applications.

EV high-power DC-DC converters EV charging systems AC-DC traction inverters Automoti

Key Features

  • Low On-Resistance.
  • High BVDSS Rating for Power.

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Full PDF Text Transcription for DMWSH120H28SM4Q (Reference)

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DMWSH120H28SM4Q Green 1200V N-CHANNEL SILICON CARBIDE POWER MOSFET Product Summary BVDSS 1200V RDS(ON) Max 28.5mΩ @VGS = 15V ID TC = +25°C 100A Description and Applicatio...

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N) Max 28.5mΩ @VGS = 15V ID TC = +25°C 100A Description and Applications This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for highefficiency power-management applications.  EV high-power DC-DC converters  EV charging systems  AC-DC traction inverters  Automotive motor drivers TO247-4 Standard Top View Bottom View Features and Benefits  Low On-Resistance  High BVDSS Rating for Power Application  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.

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