DXT651Q Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.
DXT651Q Key Features
- BVCEO > 60V
- IC = 3A High Continuous Collector Current
- ICM up to 6A Peak Pulse Current
- 2W Power Dissipation
- Low Saturation Voltage VCE(SAT) < 300mV @ 1A
- plementary PNP Type: DXT751Q
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable (Note 4)
DXT651Q Applications
- Matte Tin Plated Leads, Solderable per