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DXT651Q - 60V NPN TRANSISTOR

General Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Key Features

  • BVCEO > 60V.
  • IC = 3A High Continuous Collector Current.
  • ICM up to 6A Peak Pulse Current.
  • 2W Power Dissipation.
  • Low Saturation Voltage VCE(SAT) < 300mV @ 1A.
  • Complementary PNP Type: DXT751Q.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) DXT651Q 60V NPN LOW.

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Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features  BVCEO > 60V  IC = 3A High Continuous Collector Current  ICM up to 6A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(SAT) < 300mV @ 1A  Complementary PNP Type: DXT751Q  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) DXT651Q 60V NPN LOW SATURATION POWER TRANSISTOR Mechanical Data  Case: SOT89  Case Material: Molded Plastic. “Green” Molding Compound.