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FMMT619Q - 50V NPN TRANSISTOR

Key Features

  • BVCEO > 50V.
  • IC = 2A Continuous Collector Current.
  • 625mW Power Dissipation.
  • Low Saturation Voltage VCE(sat) < 200mV @ 1A.
  • RCE(sat) = 68mΩ for a Low Equivalent On-Resistance.
  • hFE Characterised up to 6A for High Current Gain Hold-up.
  • Complementary PNP Type: DIODES™ FMMT720Q.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DIODES™ FMMT619Q is suitable for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FMMT619Q 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features  BVCEO > 50V  IC = 2A Continuous Collector Current  625mW Power Dissipation  Low Saturation Voltage VCE(sat) < 200mV @ 1A  RCE(sat) = 68mΩ for a Low Equivalent On-Resistance  hFE Characterised up to 6A for High Current Gain Hold-up  Complementary PNP Type: DIODES™ FMMT720Q  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DIODES™ FMMT619Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.