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ZXT10P20DE6Q - 20V PNP LOW SATURATION SWITCHING TRANSISTOR

General Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Key Features

  • BVCEO > -20V.
  • IC = -2.5A Continuous Collector Current.
  • ICM = -6A Peak Pulse Current.
  • RCE(SAT) = 96mΩ for a Low Equivalent On-Resistance.
  • Low Saturation Voltage (-220mV Max @ -1A).
  • hFE Characterized up to -6A for High Current Gain Hold-Up.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. "Green" Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) SOT26 Mechanical Data.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZXT10P20DE6Q 20V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > -20V  IC = -2.5A Continuous Collector Current  ICM = -6A Peak Pulse Current  RCE(SAT) = 96mΩ for a Low Equivalent On-Resistance  Low Saturation Voltage (-220mV Max @ -1A)  hFE Characterized up to -6A for High Current Gain Hold-Up  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.