Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
Features
- BVCEO > -20V.
- IC = -2.5A Continuous Collector Current.
- ICM = -6A Peak Pulse Current.
- RCE(SAT) = 96mΩ for a Low Equivalent On-Resistance.
- Low Saturation Voltage (-220mV Max @ -1A).
- hFE Characterized up to -6A for High Current Gain Hold-Up.
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
- Halogen and Antimony Free. "Green" Device (Note 3).
- Qualified to AEC-Q101 Standards for High Reliability.
- PPAP Capable (Note 4)
SOT26
Mechanical Data.
ZXT10P20DE6Q Datasheet
