ZXT10P20DE6Q Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
ZXT10P20DE6Q Key Features
- BVCEO > -20V
- IC = -2.5A Continuous Collector Current
- ICM = -6A Peak Pulse Current
- RCE(SAT) = 96mΩ for a Low Equivalent On-Resistance
- Low Saturation Voltage (-220mV Max @ -1A)
- hFE Characterized up to -6A for High Current Gain Hold-Up
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. "Green" Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable (Note 4)