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ZXT2MA - 20V PNP LOW SATURATION SWITCHING TRANSISTOR

Key Features

  • BVCEO > -20V.
  • IC = -3.5A Continuous Collector Current.
  • Low Saturation Voltage (-220mV @ -1A).
  • RSAT = 64 mΩ for a low equivalent On-Resistance.
  • hFE specified up to -6A for high current gain hold up.
  • RθJA efficient, 60% lower than SOT23.
  • 4mm2 footprint, 50% smaller than SOT23.
  • Lead Free, RoHS Compliant (Note 1).
  • Halogen and Antimony Free. "Green" Device (Note 2).
  • Qualified to AEC-Q101 Standards for High Reli.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features and Benefits • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage (-220mV @ -1A) • RSAT = 64 mΩ for a low equivalent On-Resistance • hFE specified up to -6A for high current gain hold up • RθJA efficient, 60% lower than SOT23 • 4mm2 footprint, 50% smaller than SOT23 • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free. "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Applications • MOSFET Gate Driving • DC-DC Converters • Charging Circuits • Power switches • Motor Control A Product Line of Diodes Incorporated ZXT2MA 20V PNP LOW SATURATION SWITCHING TRANSISTOR Mechanical Data • Case: DFN322 • Case material: Molded Plastic. “Green” Molding Compound. • Terminals: Matte Tin Finish. • Nominal package height: 0.