Click to expand full text
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
DMBTA55
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
SOT-23
Pinning
1 = Base 2 = Emitter 3 = Collector
1
.020(0.50) .012(0.30)
3
.063(1.60) .055(1.40) .108(0.65) .089(0.25)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -60 -60 -4 -500 225 +150 -55 to +150 Unit V V V mA mW
o o
.026(0.65) .010(0.25) .091(2.30) .067(1.70)
.045(1.15) .034(0.85)
.118(3.00) .110(2.80) .051(1.30) .035(0.90) .0043(0.11) .0035(0.09)
.004 Max (0.10)
.027(0.