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DC COMPONENTS CO., LTD.
R
DMBTA56
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
Pinning
1 = Base 2 = Emitter 3 = Collector
.020(0.50) .012(0.30)
SOT-23
3
.063(1.60) .055(1.40) .108(0.65) .089(0.25)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -80 -80 -4 -500 225 +150 -55 to +150 Unit V V V mA mW
o o
1
2
.091(2.30) .067(1.70) .118(3.00) .110(2.80)
.045(1.15) .034(0.85)
.051(1.30) .035(0.90) .026(0.65) .010(0.25)
.0043(0.11) .0035(0.09)
C
.004 Max (0.10)
.