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DC COMPONENTS CO., LTD.
R
DXTB772
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage amplifier, voltage regulator, DC-DC converter and driver.
SOT-89
Pinning
1 = Base 2 = Collector 3 = Emitter
.066(1.70) .059(1.50) .063(1.60) .055(1.40)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (continuous) Collector Current (pulse)(1) Total Power Dissipation(2) Total Power Dissipation(3) Total Power Dissipation(4) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PD PD PD TJ TSTG Rating -40 -30 -5 -3 -7 1 2 1.5 +150 -55 to +150 Unit V V V A A W W W o C o C
.167(4.25) .159(4.05) 1 2 3 .