DP170N03 Datasheet | Developer Microelectronics

Description Single N Channel Enhancement Power MOSFET Product Summary DP170N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge with a 20V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=20V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 30 V 13A < 10.5mΩ < 12mΩ - Ro HS and Halogen-Free plaint SOP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol P-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ=25℃ Pulsedb Drain-Sourse Diode Forward Currenta Avalanche energy, single pulse (L=0.5m H, Rg=25Ω) Maximum Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS ID IDM IS TJ,TSTG 30 ±20 13 100 4.0 -55 To 150 Thermal Characteristic Parameter Thermal Resistance,Junction-to-Ambient a Symbol RθJA Limit 60 Unit V V A A A m J W ℃ Unit ℃/W 2020/10/20 DP170N03_REV1.0_EN .depuw....