DP170N03 - N-Channel MOSFET

General Description

DP170N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge with a 20V gate rating.

This device is suitable for use as a load switch or in PWM applications.

DP170N03 n-channel mosfet by Developer Microelectronics - Datasheet Preview

Datasheet Details

Part number	DP170N03
Manufacturer	Developer Microelectronics
File Size	195.35 KB
Description	N-Channel MOSFET
Datasheet	DP170N03 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
DP170HT	TFT LCD	Dopoint
DP100	PNP Silicon Transistor	AUK
DP100S	PNP Silicon Transistor	AUK
DP104	DP104	ETC
DP10D1200T*1016xx	E2 IGBT	Danfoss Silicon Power GmbH

Other Datasheets by Developer Microelectronics

Part Number	Description
DP10N60	N-Channel MOSFET
DP1510	PWM Control 3A Step-Down Converter
DP1800	Quasi-Resonant PSR CC/CV PWM Power Switch
DP1801B	Quasi-Resonant PSR CC/CV PWM Power Switch
DP1803	Quasi-Resonant PSR CC/CV PWM Power Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

General Description DP170N03 Single N Channel Enhancement Power MOSFET Product Summary DP170N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge with a 20V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=20V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 30 V 13A < 10.5mΩ < 12mΩ * RoHS and Halogen-Free Complaint SOP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol P-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ=25℃ Pulsedb Drain-Sourse Diode Forward Currenta Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) Maximum Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS ID IDM IS EAS PD TJ,TSTG 30 ±20 13 100 4.0 54 3.