DX10N60R - N-Channel MOSFET

General Description

These N-channel MOSFET are produced using advanced DeXin’s MOSFET Technology, which provides low on- state resistance,rugged avalanche, high switching performance and excellent quality.

These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Key Features

VDS = 600V.
VDS = 660V @ Tjmax.
ID = 10A @ VGS = 10V.
RDS(ON) ≤ 0.7Ω @ VGS = 10V.

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DX10N60R n-channel mosfet by Dexin Chip - Datasheet Preview

Datasheet Details

Part number	DX10N60R
Manufacturer	Dexin Chip
File Size	216.16 KB
Description	N-Channel MOSFET
Datasheet	DX10N60R Datasheet

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Other Datasheets by Dexin Chip

Part Number	Description
DX10N60F	N-Channel MOSFET

Full PDF Text Transcription (Reference)

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DX10N60R/DX10N60F N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced DeXin’s MOSFET Technology, which provides low on- state resistance,rugged avalanche, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  VDS = 660V @ Tjmax  ID = 10A @ VGS = 10V  RDS(ON) ≤ 0.