BTC12-200 Datasheet | Digitron

DIGITRON SEMICONDUCTORS BTC12 SERIES SILICON BIDIRECTIONAL THYRISTORS Available Non-Ro HS (standard) or Ro HS pliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Peak repetitive off-state voltage (TJ = 125°C) BTC12-200 BTC12-400 BTC12-600 (1) Symbol Value Unit VDRM 200 400 600 12 90 100 40 16 0.35 4.0 -40 to +125 -40 to +150 10 Volts RMS on-state current (TC = 70°C) Peak non-repetitive surge current (1 cycle, 50 Hz, t = 20ms) (1/2 cycle, 50Hz, t = 10ms) Circuit fusing considerations (TJ = -40 to 125°C , t = 10ms) Peak gate power (pulse width = 2.0µs) Average gate power (t = 10ms) Peak gate current (pulse width = 1.0µs) Operating junction temperature range Storage temperature range Maximum rate of change of on-state current (ITM = 12A, IG = 200m A) IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg di/dt Amps Amps A2s Watts Watts Amps °C °C A/µs Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Symbol RӨJC Maximum 2.2 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Peak blocking current (either direction) (Rated VDRM @ TJ = 125°C, gate open) Peak on-state voltage (either direction) (ITM = 17A peak) Peak gate trigger voltage (main terminal voltage = 12V, RL = 100Ω) All quadrants (main terminal voltage = rated VDRM, RL = 1kΩ, TJ = 125°C) All quadrants Holding current (either direction) (main terminal voltage= 12V, gate open, initiating current = 1.0A, TC = 25°C) Latching current (main terminal voltage = 24V, gate trigger source = 15V, 100Ω) MT2(+), G(+) MT2(-), G(-) MT2(+), G(-) Critical rate of rise of off state voltage (Rated VDRM, exponential voltage rise, gate open, TJ = 125°C) Blocking...