The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
DTM3304
www.din-tek.jp
N-Channel 20-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20 0.005 at VGS = 4.5 V 0.007 at VGS = 2.5 V
ID (A) 19.5 15.5
Qg (Typ.) 17.5 nC
S1 S2 S3 G4
SO-8 Top View
8D 7D 6D 5D
FEATURES • Halogen-free Option Available
TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg Tested
APPLICATIONS • Synchronous Rectification
D
RoHS
COMPLIANT
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
19.5 12.5 15.6 10.0
Pulsed Drain Current
IDM 60
Continuous Source Current (Diode Conduction)a
IS 3.2 1.