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P-Channel 40 V (D-S) MOSFET
DTM4
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.0094 at VGS = - 10 V - 40
0.0132 at VGS = - 4.5 V
ID (A) - 18d - 15d
Qg (Typ.) 35.4 nC
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
S G
D P-Channel MOSFET
FEATURES
• 100% Rg and UIS Tested
APPLICATIONS
• Adaptor Switch • Load Switch • Power Management • Mobile Computing
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current (t = 300 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current Single-Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.
DTM4015 Datasheet
