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Dual N-Channel MOSFET Common Drain, ESD Protection
DTM8021
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.017 at VGS = 4.5 V 20
0.020 at VGS = 2.5 V
ID (A) 6.5 5.5
FEATURES
• Halogen-free Option Available • TrenchFET® Power MOSFETs • ESD Protected: 3000 V
Pb-free Available
RoHS*
COMPLIANT
D1 1 S1 2 S1 3 G1 4
TSSOP-8 Top View
8 D2 7 S2 6 S2 5 G2
D1 D2
G1 S1
G2 S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
6.5 5.2 5.5 3.5
Pulsed Drain Current
IDM 30
Continuous Source Current (Diode Conduction)a
IS 1.5 1.0
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
1.5 1.0 0.96 0.
DTM8021 Datasheet
