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DTP2N65FSJ - N-Channel Super Junction Power MOSFET

This page provides the datasheet information for the DTP2N65FSJ, a member of the DTP2N65SJ N-Channel Super Junction Power MOSFET family.

Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • Dynamic dV/dt Rating.
  • Low Thermal Resistance.
  • Lead (Pb)-free Available Available RoHS.

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Datasheet preview – DTP2N65FSJ

Datasheet Details

Part number DTP2N65FSJ
Manufacturer Din-Tek
File Size 926.16 KB
Description N-Channel Super Junction Power MOSFET
Datasheet download datasheet DTP2N65FSJ Datasheet
Additional preview pages of the DTP2N65FSJ datasheet.

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Full PDF Text Transcription

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DTP2N65SJ/DTP2N65FSJ/DTU2N65SJ/DTL2N65SJ ZZZGLQWHNMS /$IBOOFM657 %4 4VQFS+VODUJPOPower MOSFET PRODUCT SUMMARY VDS (V) 650 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single 2.3 FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.
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