DTP2N65SJ Description
DTP2N65SJ/DTP2N65FSJ/DTU2N65SJ/DTL2N65SJ ZZZGLQWHNMS /$IBOOFM657 %4 4VQFS+VODUJPOPower MOSFET PRODUCT SUMMARY VDS (V) 650 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single.
DTP2N65SJ Key Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s
- Sink to Lead Creepage Distance = 4.8 mm
- Dynamic dV/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available