DTP4N80 Datasheet | Din-Tek Semiconductor

FEATURES - Ultra Low Gate Charge - Reduced Gate Drive Requirement - Enhanced 30 V, VGS Rating - Reduced Ciss, Coss, Crss - Extremely High Frequency Operation - Repetitive Avalanche Rated - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT TO-220AB TO-220 FULLPAK TO-252 TO-251 GD S Top View GDS Top View GDS Top View GDS Top View DTP4N80DTP4N80FDTU4N80DTL4N80 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation...