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N-Channel 60 V (D-S) MOSFET
DTQ3610
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () 0.0113 at VGS = 10 V 0.0141 at VGS = 4.5 V
ID (A)a, e 38 33
DFN 3x3 EP
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Bottom View
Qg (Typ.) 53 nC
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS
• Notebook PC Core • VRM/POL
D
Top View
18 27 36 45
G
Pin 1
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
L = 0.
DTQ3610 Datasheet
