DTQ3808 Datasheet | Din-Tek Semiconductor

FEATURES - DT-Trench Power MOSFET - 100 % Rg and UIS Tested - Ro HS pliant APPLICATIONS - Notebook PC Core - VRM/POL PDFN3.3X3.3-8L Pin Configuration PIN1 Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb VDS VGS TC = 25 °C ID TC = 100 °C IDM Single Pulse Avalanche Current Single Avalanche Energy Maximum Power Dissipationc Operating Junction and Storage Temperature Range TC = 25 °C TC = 100 °C EAS PD TJ, Tstg LIMIT 80 ± 20 45 33 180 28 189 43 17.2 -55 to +150 UNIT V A m J W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient (PCB Mount)d Junction-to-Case (Drain) Rth JA Rth JC °C/W Notes a. Calculated continuous current based on maximum allowablejunction temperature. b. Repetitive rating; pulse width limited by max. junction temperature. c. Pd is based on max. junction temperature, using junction-case thermal resistance. d. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper,in a still air environment with Ta=25 °C. Rev.B .din-tek.jp...