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N-Channel 60 V (D-S) MOSFET
DTQ6600
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (mΩ)(Typ.)
60
1.8 at VGS = 10 V
2.8 at VGS= 4.5 V
ID (A)a, e Qg (Typ.)
180
105 nC
FEATURES • DT-Trench Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS
• Notebook PC Core • VRM/POL
Top View
DFN5X6 Bottom View
Top View
1
8
2
7
3
6
4
5
D G
PIN1
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C ID
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
IAS L = 0.
DTQ6600 Datasheet
