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DTS2301 - P-Channel MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • AEC-Q101 Qualifiedd.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D Top View S G D P-Channel MOSFET.

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Datasheet Details

Part number DTS2301
Manufacturer Din-Tek
File Size 393.38 KB
Description P-Channel MOSFET
Datasheet download datasheet DTS2301 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel 20 V (D-S) MOSFET DTS2301 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V RDS(on) () at VGS = - 2.5 V ID (A) Configuration - 20 0.068 0.095 - 3.8 Single FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Continuous Source Current (Diode Conduction)a TC = 25 °C TC = 125 °C ID IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.