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P-Channel 0-V (D-S) MOSFET
DTS2301B
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 4.5 V RDS(on) () at VGS = - 2.5 V ID (A) Configuration
- 20 0.071 0.095 - 3.8
Single
FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET
APPLICATIONS • Load Switch for Portable Devices
TO-236 (SOT-23)
G 1
S2
3D
Top View
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C TC = 125 °C
ID
Continuous Source Current (Diode Conduction) Pulsed Drain Currenta
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.