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DTS5606 - N- and P-Channel MOSFET

Datasheet Summary

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC SOT-563 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET.

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Datasheet Details

Part number DTS5606
Manufacturer Din-Tek
File Size 1.12 MB
Description N- and P-Channel MOSFET
Datasheet download datasheet DTS5606 Datasheet
Additional preview pages of the DTS5606 datasheet.

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Full PDF Text Transcription

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DTS5606 www.din-tek.jp N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY N-Channel P-Channel VDS (V) 20 - 20 RDS(on) (Ω) 0.299 at VGS = 4.5 V 0.426 at VGS = 2.5 V 0.689 at VGS = - 4.5 V 0.873 at VGS = - 2.5 V ID (A) 1.2 0.9 - 0.5 - 0.4 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC SOT-563 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS 12 -12 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID 1.2 - 0.5 0.9 - 0.4 Pulsed Drain Current IDM 3.
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