DTS5606 Datasheet | Din-Tek Semiconductor

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFET - 100 % Rg Tested - pliant to Ro HS Directive 2002/95/EC SOT-563 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage -12 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C - 0.5 0.9 - 0.4 Pulsed Drain Current IDM 3.5 - 2 Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C 1.15...