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N-Channel 100 V (D-S) MOSFET
DTU20N10
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () Max. 0.066 at VGS = 10 V 0.080 at VGS = 4.5 V
ID (A) 20 15.2
Qg (Typ.) 19.8
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested • Material categorization:
TO-252
D G
APPLICATIONS
• DC/DC Converters • DC/AC Inverters • Motor Drives
GD S Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 70 °C
L = 0.1 mH TC = 25 °C TA = 25 °Cc
VDS VGS
ID
IDM IAS EAS
PD
TJ, Tstg
Limit 100 ± 20 20 15.
DTU20N10 Datasheet
